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STP45N60DM2AG

Part No STP45N60DM2AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 34A TO220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 37 Weeks
Features N-Channel 600 V 34A (Tc) 250W (Tc) Through Hole TO-220
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ DM2
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220
Family Name STP45
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 50
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898330-STP45N60DM2AG
Ultra Librarian 3D Model Ultra Librarian STP45N60DM2AG CAD Model

Description

STP45N60DM2AG - STMicroelectronics

The STP45N60DM2AG is a state-of-the-art N-channel MDmesh™ DM2 Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its advanced and integrated technologies. This power MOSFET is a testament to the company's commitment to providing energy-efficient and high-performance components for a wide range of applications.

With a drain-source voltage (V<sub>DS) of 600V, the STP45N60DM2AG is engineered to handle high voltage operations with ease. It features a low on-resistance (R<sub>DS(on)) of only 0.135Ω, which significantly reduces conduction losses, making it an excellent choice for applications requiring high efficiency. The device's maximum continuous drain current (I<sub>D) is rated at 45A, allowing it to manage substantial power levels in various electronic circuits.

The STP45N60DM2AG utilizes ST's second generation MDmesh™ technology, which combines a vertical structure with a proprietary strip layout to yield one of the industry's best on-resistance per area ratios. This technology also provides reduced gate charge (Q<sub>g), enhancing the overall switching performance and making the MOSFET suitable for high-frequency power switching applications.

This Power MOSFET is encapsulated in a TO-220 package, known for its robustness and good thermal performance, making it ideal for through-hole mounting in a variety of electronic devices. The package ensures that the STP45N60DM2AG can operate reliably even under high temperature and stress conditions, with a junction temperature range from -55°C to 150°C.

Applications for the STP45N60DM2AG are diverse and include switched-mode power supplies (SMPS), LED lighting, high-efficiency converters, welding equipment, and solar inverters, among others. Its high-voltage capability, efficiency, and reliability make it a preferred choice for designers looking to optimize their power management solutions.

In conclusion, the STP45N60DM2AG Power MOSFET from STMicroelectronics is a high-performance component that offers a combination of low on-resistance, high switching frequency, and energy efficiency. Its robust package and advanced MDmesh™ DM2 technology make it suitable for a wide range of power applications, ensuring optimal performance in the most demanding environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.8122 $58.1220
25+ $4.7690 $119.2250
38+ $4.6200 $175.5600
52+ $4.4710 $232.4920
67+ $4.3219 $289.5673
90+ $3.8748 $348.7320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,790 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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