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STP46N60M6

Part No STP46N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Vgs (Max) ±25V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP46
Other Names 497-19465,-1138-STP46N60M6
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278047-STP46N60M6
Ultra Librarian 3D Model Ultra Librarian STP46N60M6 CAD Model

Description

Introducing the STP46N60M6 Power MOSFET by STMicroelectronics

STMicroelectronics, a global semiconductor leader, presents the STP46N60M6, a high-performance N-channel Power MOSFET designed to deliver efficiency and reliability for a broad range of applications. This device is part of STMicroelectronics' MDmesh™ M6 series, which features state-of-the-art technology for enhanced power handling and thermal performance.

Key Features:

  • Advanced MDmesh™ M6 Technology: The STP46N60M6 utilizes ST's innovative MDmesh M6 technology, offering an optimal balance between on-resistance (R<sub>DS(on)) and gate charge (Q<sub>g) to maximize efficiency in power conversion applications.
  • High Voltage Capability: With a breakdown voltage of 600V, this MOSFET is suitable for high voltage applications, ensuring safe operation under stressful conditions.
  • Low On-Resistance: The low on-resistance of this device minimizes conduction losses, leading to improved overall system efficiency.
  • Fast Switching Performance: The STP46N60M6 is designed for fast switching, reducing switching losses and improving performance in applications such as switching power supplies and motor control.
  • Reduced Gate Charge: A lower gate charge facilitates faster switching speeds and reduces the power required to drive the MOSFET, contributing to energy savings in power management circuits.
  • High dv/dt Capability: The device can handle high voltage changes per unit time, making it robust against fast voltage transients.

Applications:

The versatility of the STP46N60M6 makes it ideal for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • DC-DC Converters
  • Motor Control Units
  • Power Factor Correction (PFC) Circuits
  • Welding Equipment

Package and Sustainability:

The STP46N60M6 is available in a TO-220 package, known for its robustness and excellent thermal performance. STMicroelectronics is committed to sustainability, and this product complies with the European Union's RoHS directive, ensuring that it is free from hazardous substances.

With its combination of high voltage capability, low on-resistance, and fast switching performance, the STP46N60M6 is a prime choice for designers seeking to enhance the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.3985 $63.9850
22+ $5.2501 $115.5022
35+ $5.0861 $178.0135
47+ $4.9219 $231.3293
61+ $4.7579 $290.2319
82+ $4.2656 $349.7792
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,180 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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