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STP4NK60Z

Part No STP4NK60Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 510pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 006282-STP4NK60Z
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STP4NK60Z CAD Model

Description

STP4NK60Z - N-Channel 600V - 1.2 Ohm - 4A SuperMESH Power MOSFET

The STP4NK60Z is a high voltage MOSFET designed to deliver the best in class performance for a wide range of high voltage applications. Manufactured by STMicroelectronics, a global semiconductor leader, this power MOSFET is part of their SuperMESH™ series, which is renowned for its outstanding efficiency and reliability. The STP4NK60Z is ideally suited for applications that require fast switching, low on-resistance, and minimal power loss.

This N-channel MOSFET operates at 600V, making it an excellent choice for systems that require high voltage handling capabilities. Its low on-resistance of 1.2 Ohm, combined with a current rating of 4A, ensures that the STP4NK60Z can manage significant power without overheating. These features make the STP4NK60Z suitable for a variety of power management tasks, including switch-mode power supplies, lighting circuits, motor control, and other high-efficiency power conversion applications.

One of the key benefits of the STP4NK60Z is its SuperMESH™ technology, which provides an optimal balance between on-resistance, gate charge, and switching performance. This results in a MOSFET that not only reduces conduction losses but also minimizes switching losses, leading to a more efficient power conversion process. Moreover, this technology allows for a reduction in the gate drive requirements, which can simplify the design of the driving circuitry.

The device is encapsulated in a TO-220 package, which is widely used for power MOSFETs and ensures good thermal performance and ease of mounting on a heatsink. Additionally, the STP4NK60Z features a robust and rugged design, with a high avalanche ruggedness that provides enhanced durability and reliability, even under harsh operating conditions.

Overall, the STP4NK60Z from STMicroelectronics represents a powerful and efficient solution for designers looking to optimize their high voltage power management systems. With its strong electrical characteristics and the backing of STMicroelectronics' reputation for quality, this MOSFET is a solid choice for innovative and demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4291 $51.4920
285+ $0.3521 $100.3485
440+ $0.3411 $150.0840
610+ $0.3301 $201.3610
785+ $0.3191 $250.4935
1,050+ $0.2861 $300.4050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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