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STP55N06

Part No STP55N06
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Not available to order REORD 511-STP55NE06 TO-220 N-CH 55A 60V
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RoHS Non-Compliant
Win Source Part Number 1119604-STP55N06
Categories Transistors - FETs, MOSFETs - RF
Manufacturer STMicroelectronics
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP55N06 CAD Model

Description

STP55N06 - STMicroelectronics Power MOSFET

The STP55N06 from STMicroelectronics is a robust and versatile N-channel Power MOSFET designed to deliver high performance in a wide range of applications. This power semiconductor device is well-suited for tasks requiring efficient power management and high-speed switching. Its characteristics make it ideal for use in high-current and high-voltage environments, such as power supplies, motor control circuits, and various types of converters.

The STP55N06 boasts an impressive drain-source voltage (V<sub>DS) of 60V, which allows it to handle substantial voltage levels without succumbing to breakdowns. It also features a continuous drain current (I<sub>D) of 55A at 25°C, ensuring that it can manage heavy loads with ease. This current capability is supported by a low on-resistance (R<sub>DS(on)) of just 0.014Ω, which minimizes power losses and improves overall efficiency when the device is in the ON state.

One of the key advantages of the STP55N06 is its fast switching speed, which is a critical feature for applications that require rapid transitions between the ON and OFF states. The low gate charge (Q<sub>g) and reduced input capacitance contribute to this swift performance, allowing for better control of the power flow and reduced switching losses.

The STP55N06 is encapsulated in a TO-220 package, which is known for its excellent thermal performance. The package design ensures that the MOSFET can dissipate heat effectively, maintaining stability and prolonging the life of the device even under high-temperature operating conditions.

This Power MOSFET is also designed with protection features in mind. It includes an integrated avalanche ruggedness, which protects the device against sudden energy surges that can occur during inductive load switching. Furthermore, the STP55N06 is characterized by its logic level threshold, making it compatible with 5V logic signals, which simplifies the interface with microcontrollers and other logic devices.

In summary, the STP55N06 from STMicroelectronics is a high-performance N-channel Power MOSFET that excels in applications demanding high efficiency, fast switching, and reliability. Its robust design and protective features make it a preferred choice for engineers and designers looking to build advanced power management systems.

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