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STR2P3LLH6

Part No STR2P3LLH6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 6nC @ 4.5V
Max Input Capacitance 639pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 350mW (Tc)
Maximum Rds On at Id,Vgs 56 mOhm @ 1A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1103833-STR2P3LLH6
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STR2P3LLH6 CAD Model

Description

STMicroelectronics STR2P3LLH6 Low V<sub>CE(sat) PNP Transistor

The STR2P3LLH6 is a high-performance PNP transistor developed by STMicroelectronics, a leader in semiconductor solutions. This device is designed to offer low collector-emitter saturation voltage (V<sub>CE(sat)), making it an ideal choice for power management applications where efficiency is paramount. The STR2P3LLH6 is part of STMicroelectronics' low V<sub>CE(sat) bipolar transistors, known for their energy-saving features and ability to minimize power losses.

With a collector-emitter voltage (V<sub>CEO) of -30V and a collector current (I<sub>C) capability of up to -3A, the STR2P3LLH6 is suitable for a wide range of applications, including load switches, power supply circuits, and DC-DC converters. Its low saturation voltage helps to reduce the conduction losses when the transistor is in the on-state, thereby improving the overall efficiency of the application it is used in.

The STR2P3LLH6 is housed in a small and flat SOT-23-3L package, which is not only space-saving but also allows for efficient heat dissipation. This packaging makes it an excellent choice for compact designs where space is at a premium. Additionally, the device features a high current gain (h<sub>FE), which ensures that a minimum amount of base current is needed to keep the transistor in the saturated region.

STMicroelectronics has also taken measures to ensure the reliability of the STR2P3LLH6 by incorporating robustness against reverse bias conditions. This characteristic provides a safeguard against potential damage caused by reverse voltage, enhancing the longevity of the product.

Whether you're designing power management systems for consumer electronics, automotive, or industrial applications, the STR2P3LLH6 offers a combination of low power dissipation, high efficiency, and reliability. By choosing STMicroelectronics' STR2P3LLH6 for your designs, you can expect a performance that meets the rigorous demands of modern electronic circuits.

For detailed specifications and application notes, designers are encouraged to consult the datasheet and technical documentation available on the STMicroelectronics website.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7277 $50.9390
170+ $0.5971 $101.5070
260+ $0.5784 $150.3840
360+ $0.5598 $201.5280
465+ $0.5411 $251.6115
620+ $0.4851 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 41,950 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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