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STS8N6LF6AG

Part No STS8N6LF6AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL 60V 8A 8SO  /  N-Channel 60 V 8A (Ta) 3.2W (Ta) Surface Mount 8-SOIC
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101, STripFET™ F6
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1340 pF @ 25 V
Power Dissipation (Max) 3.2W (Ta)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number STS8N6
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-17150-1,497-17150-6,497-17150-2
Standard Package 2,500
Win Source Part Number 1097281-STS8N6LF6AG
Ultra Librarian 3D Model Ultra Librarian STS8N6LF6AG CAD Model

Description

Introducing the STS8N6LF6AG MOSFET from STMicroelectronics

The STS8N6LF6AG is a state-of-the-art N-channel Power MOSFET produced by STMicroelectronics, a global semiconductor leader known for its innovative approach in electronics. This high-performance MOSFET is designed to meet the demands of modern energy-efficient power conversion applications. The device is part of STMicroelectronics' STripFET™ VI DeepGATE™ technology, which enables reduced on-state resistance and lower gate charge, leading to superior switching performance.

Key Features of the STS8N6LF6AG

  • Low Threshold Drive: The MOSFET can be driven at lower gate voltages, making it compatible with a wide range of drive circuits and controllers.
  • High Switching Efficiency: With its low on-state resistance (R<sub>DS(on)) and low gate charge (Q<sub>g), the STS8N6LF6AG ensures high efficiency in switching applications, which is vital for reducing energy consumption and heat generation.
  • Robust Thermal Characteristics: The device offers excellent thermal performance thanks to its advanced package design, ensuring reliability even under high current operation or challenging thermal environments.
  • 100% Avalanche Tested: Guaranteeing robustness, each unit is rigorously tested for avalanche breakdown resistance, a critical factor for power stability and long-term durability.

Applications

The versatility of the STS8N6LF6AG MOSFET makes it suitable for a broad range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • Automotive Applications
  • Power Management Solutions

Technical Specifications

The STS8N6LF6AG boasts impressive technical specifications that make it a top choice for designers. It has a continuous drain current of 80A, which allows it to handle high current loads with ease. The device operates at a standard threshold voltage, ensuring compatibility with a wide range of control circuits. Additionally, it features a maximum drain-source voltage (V<sub>DSS) of 60V, providing ample headroom for various applications.

With its combination of efficiency, reliability, and performance, the STS8N6LF6AG from STMicroelectronics represents a premier choice for engineers looking to optimize their power management designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7181 $51.5430
75+ $1.4097 $105.7275
110+ $1.3656 $150.2160
155+ $1.3216 $204.8480
200+ $1.2775 $255.5000
265+ $1.1454 $303.5310
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,990 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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