STU5N95K3 - N-channel 950 V, 1.7 Ω typ., 4.4 A SuperMESH™3 Power MOSFET in a DPAK package

The STU5N95K3 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, designed to meet a broad range of applications requiring high voltage and current handling capabilities. This device is a part of the SuperMESH™3 family, which is renowned for its excellent RDS(on) area ratio, reduced gate charge, and low capacitance.

This Power MOSFET operates at a drain-source voltage of 950 V, making it an ideal choice for high voltage applications. The STU5N95K3 boasts a very low on-resistance (RDS(on)) of just 1.7 Ω, which is typical for this class of device, ensuring high efficiency and minimal power loss during operation. The MOSFET is capable of delivering a continuous drain current of 4.4 A, suitable for a wide range of power applications.

The STU5N95K3 is housed in a robust DPAK package, which not only offers a compact footprint but also ensures good thermal performance. The device features Zener-protected gate-source voltage (Vgs) to prevent damage from electrostatic discharge (ESD) and other voltage spikes, enhancing its reliability and longevity. Its high dv/dt capability ensures safe operation under fast-switching conditions and makes it suitable for use in applications such as switch-mode power supplies, lighting, and converters.

STMicroelectronics has designed the STU5N95K3 with a focus on minimizing conduction losses and switching losses, which is critical for improving the efficiency of power management systems. The MOSFET's fast switching speed and low gate charge contribute to reduced switching losses, while its low threshold voltage ensures easy driveability.

Overall, the STU5N95K3 from STMicroelectronics is a powerful and reliable component for designers seeking a high-voltage, high-efficiency Power MOSFET. Its advanced features and robust package make it a versatile choice for a wide array of industrial, consumer, and computing applications where power density and efficiency are of paramount importance.