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STU6N60DM2

Part No STU6N60DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ DM2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 274 pF @ 100 V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number STU6N60
Standard Package 3,000
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278115-STU6N60DM2
Ultra Librarian 3D Model Ultra Librarian STU6N60DM2 CAD Model

Description

STU6N60DM2 - N-Channel 600V - 4A - TO-251 Power MOSFET

The STU6N60DM2 is a high-performance N-Channel Power MOSFET, brought to you by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver the efficiency and reliability needed for a wide range of high-voltage applications. With a drain-source voltage of 600V and a current rating of 4A, the STU6N60DM2 is an excellent choice for switching applications that require high blocking voltage capability and high switching speed.

Encased in a TO-251 package, also known as IPAK, the STU6N60DM2 offers a compact form factor while ensuring good thermal performance and power handling capabilities. It is designed with STMicroelectronics' advanced MDmesh™ technology, which combines a vertical structure with a charge-balanced doping profile resulting in extremely low on-resistance (RDS(on)) and reduced gate charge (Qg). These features translate into high efficiency and reduced power losses during operation.

The STU6N60DM2 is suitable for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED lighting
  • High-efficiency DC/DC converters
  • Motor control
  • Power factor correction circuits

With its built-in fast recovery diode, the STU6N60DM2 is optimized for body diode reverse recovery performance, which is critical for applications like hard switching conditions in power converters. This feature helps to minimize the risk of erratic or unstable operation, ensuring a more reliable end product.

Additional features of the STU6N60DM2 include:

  • Low threshold drive
  • 100% avalanche tested
  • Zener-protected

STMicroelectronics has designed the STU6N60DM2 with the environment in mind, ensuring that it meets RoHS and Halogen-Free compliance standards. This commitment to environmental stewardship means that the STU6N60DM2 not only helps you create energy-efficient solutions but also supports your company's green initiatives.

Whether you're designing power supplies, inverters, or any other application that demands high voltage and current handling with efficient switching, the STU6N60DM2 from STMicroelectronics is a robust and reliable choice that you can count on.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6307 $50.4560
195+ $0.5175 $100.9125
300+ $0.5014 $150.4200
415+ $0.4852 $201.3580
535+ $0.4690 $250.9150
715+ $0.4205 $300.6575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,310 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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