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STU80N4F6

Part No STU80N4F6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series DeepGATE™, STripFET™ VI
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2150 pF @ 25 V
Power Dissipation (Max) 70W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (IPAK)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number STU80
Other Names 497-13657-5,-497-13657-5
Standard Package 75
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278134-STU80N4F6
Ultra Librarian 3D Model Ultra Librarian STU80N4F6 CAD Model

Description

STU80N4F6 - MOSFET from STMicroelectronics

The STU80N4F6 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, one of the leaders in semiconductor technology. This Power MOSFET is designed to deliver high efficiency and power density, making it an ideal choice for a wide range of electronic applications, including but not limited to, power supplies, motor controls, automotive applications, and high-performance computing systems.

Featuring an advanced STripFET™ VI technology, the STU80N4F6 offers a low on-resistance (R<sub>DS(on)) which significantly reduces conduction losses. This technology also provides an excellent figure of merit (FoM) in terms of switching performance, which is critical for applications that require fast switching capabilities.

The device is encapsulated in a robust and compact surface-mount DPAK package, which ensures a high level of reliability and a good thermal performance due to its excellent power dissipation characteristics. The STU80N4F6 is capable of withstanding high continuous drain currents up to 80A, making it suitable for handling high power applications with ease.

Key features of the STU80N4F6 include:

  • Drain-source voltage (V<sub>DS): 40V, providing a good balance between breakdown voltage and low on-resistance.
  • Continuous drain current (I<sub>D): 80A, allowing for high current handling capability.
  • Low gate charge (Q<sub>g): This feature contributes to reduced switching losses, improving the overall efficiency of the device.
  • Low threshold voltage (V<sub>GS(th)): Ensures a lower gate drive requirement and simplifies the drive circuitry.

Moreover, the STU80N4F6 is designed to have a low input capacitance (C<sub>iss), which reduces the drive power required and enhances the overall system efficiency. It is also characterized by its ruggedness and ability to withstand harsh operating conditions, making it a reliable choice for demanding environments.

STMicroelectronics has also placed a strong emphasis on environmental sustainability, ensuring that the STU80N4F6 complies with RoHS regulations, minimizing the environmental impact of electronic components.

In summary, the STU80N4F6 from STMicroelectronics is a powerful and efficient solution for designers looking to optimize their power management systems with a MOSFET that offers high current capability, fast switching, and low power losses.

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