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STW12NK80Z

Part No STW12NK80Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 10.5A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 87nC @ 10V
Max Input Capacitance 2620pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 5.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 037737-STW12NK80Z
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STW12NK80Z CAD Model

Description

STW12NK80Z - N-Channel 800V - 0.78 Ohm - 11A - TO-247 Zener-Protected SuperMESH™ Power MOSFET

The STW12NK80Z is a high-performance N-Channel Zener-Protected SuperMESH™ Power MOSFET produced by STMicroelectronics, designed to offer superior switching performance and improved efficiency in a wide range of applications. This MOSFET is part of ST's SuperMESH™ series, which is well-known for combining a high voltage capability with low on-resistance and fast switching speed.

With a drain-source voltage (V<sub>DS) of 800V, the STW12NK80Z is well-suited for high voltage applications that require efficient power management. The device boasts an on-resistance (R<sub>DS(on)) of just 0.78 Ohm, which helps to minimize conduction losses and improve overall system efficiency. The 11A continuous drain current (I<sub>D) rating ensures that the MOSFET can handle significant power without overheating, making it ideal for high-performance power supplies and converters.

One of the key features of the STW12NK80Z is its Zener-protected gate, which provides enhanced protection against overvoltage and ensures the reliability of the MOSFET in harsh conditions. This makes it a robust choice for industrial applications, including motor drives and power inverters, where reliability and durability are critical.

The TO-247 package of the STW12NK80Z is designed to offer excellent thermal performance, ensuring the MOSFET can operate at high temperatures without compromising its lifespan. This, combined with the device's high avalanche ruggedness, makes it suitable for tough operating environments.

Furthermore, the STW12NK80Z features a fast switching speed, which is essential for reducing switching losses in high-frequency circuits. This characteristic is particularly important in applications such as switch mode power supplies (SMPS) and lighting ballasts, where efficiency is paramount.

In summary, the STW12NK80Z from STMicroelectronics is a powerful and reliable component that provides an optimal solution for designers looking to improve the efficiency and performance of their high voltage power management systems. Its robust construction and protection features ensure long-term reliability in a variety of demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2556 $58.6008
44+ $2.6713 $117.5372
67+ $2.5879 $173.3893
93+ $2.5044 $232.9092
120+ $2.4209 $290.5080
160+ $2.1705 $347.2800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 162 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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