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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ DM2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56.3 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2540 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW35
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 600
Win Source Part Number 998697-STW35N65DM2
Ultra Librarian 3D Model Ultra Librarian STW35N65DM2 CAD Model

Description

The STW35N65DM2 is a cutting-edge power MOSFET designed and manufactured by STMicroelectronics, one of the industry leaders in semiconductor solutions. This high-performance transistor is part of the MDmesh™ DM2 series, which is renowned for its excellent efficiency and thermal performance. The STW35N65DM2 is specifically engineered to address the demanding requirements of high-power applications such as switch-mode power supplies, welding equipment, solar inverters, and UPS systems.

Key Features

  • Advanced Technology: The STW35N65DM2 utilizes STMicroelectronics' second-generation MDmesh™ DM2 technology, which combines a high voltage super-junction structure with a fast recovery diode. This ensures low on-resistance and reduced switching losses.
  • High Voltage Rating: With a drain-source voltage (V<sub>DS) of 650V, this MOSFET can safely handle high voltage applications, providing designers with a robust and reliable component for their high-voltage designs.
  • High Current Capacity: The device is capable of continuous current (I<sub>D) up to 31A, making it suitable for applications with high current demands.
  • Improved Efficiency: The low gate charge (Q<sub>g) and low on-state resistance (R<sub>DS(on)) minimize conduction and switching losses, which translates to higher efficiency in power conversion applications.
  • Enhanced Thermal Performance: The MOSFET's package is designed for optimal heat dissipation, ensuring reliable operation even under high temperature conditions.

Applications

The versatility of the STW35N65DM2 makes it an ideal choice for a wide range of high-power applications. Some of the key applications include:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • Solar Inverters
  • High-performance DC/DC converters
  • Welding and Induction Heating Equipment

In conclusion, the STW35N65DM2 from STMicroelectronics represents a blend of advanced semiconductor technology with practical design considerations, aimed at delivering performance, efficiency, and reliability for power management solutions in a variety of high-demand environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.1548 $56.7864
44+ $2.5885 $113.8940
67+ $2.5077 $168.0159
93+ $2.4267 $225.6831
120+ $2.3458 $281.4960
160+ $2.1031 $336.4960
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Availability: 563 pieces
MOQ: 18 pcs
Order Increment : 1 piece
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