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STW37N60DM2AG

Part No STW37N60DM2AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 28A TO247  /  N-Channel 600 V 28A (Tc) 210W (Tc) Through Hole TO-247-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ DM2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 100 V
Power Dissipation (Max) 210W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW37
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16103-5,-497-16103-5
Standard Package 30
Win Source Part Number 1182642-STW37N60DM2AG
Ultra Librarian 3D Model Ultra Librarian STW37N60DM2AG CAD Model

Description

STW37N60DM2AG - High-Efficiency Power MOSFET by STMicroelectronics

The STW37N60DM2AG is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This device is part of STMicroelectronics' MDmesh™ DM2 series, which is renowned for its high energy efficiency and performance in a wide range of power applications. The STW37N60DM2AG MOSFET is specifically engineered to address the demands of high-power systems requiring low on-resistance (R<sub>DS(on)) and minimal gate charge (Q<sub>g).

With a robust and rugged design, the STW37N60DM2AG offers a drain-source voltage (V<sub>DS) of 600V, which makes it an excellent choice for applications subject to high voltage stress. It is capable of continuous current (I<sub>D) up to 37A, ensuring that it can handle significant power without compromising performance. The device's maximum junction temperature of 150°C provides a wide operating temperature range, which is essential for reliability in various environments.

The MOSFET comes in a TO-247 long leads package, which is known for its excellent thermal performance and ease of mounting on a heatsink. This package is suitable for through-hole mounting, which is beneficial for applications requiring strong mechanical anchoring and efficient heat dissipation. The long leads also facilitate easier handling and soldering during the assembly process.

One of the key features of the STW37N60DM2AG is its fast-switching capability, which is critical for reducing switching losses in high-frequency operations. This makes it an ideal choice for applications like switch-mode power supplies, LED lighting, welding equipment, and solar inverters, where efficiency is of utmost importance. Additionally, the low gate charge minimizes the power required to drive the MOSFET, further enhancing the overall system efficiency.

STMicroelectronics has also integrated Zener-protected gates into this MOSFET to provide enhanced protection against electrostatic discharge (ESD) events. This feature ensures long-term reliability and stability of the device, safeguarding it from the potential damages caused by unexpected voltage spikes.

Overall, the STW37N60DM2AG by STMicroelectronics is a testament to the company's commitment to providing high-quality, innovative semiconductor solutions that meet the evolving needs of the electronics industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.3980 $63.9800
23+ $5.2496 $120.7408
35+ $5.0856 $177.9960
47+ $4.9215 $231.3105
61+ $4.7574 $290.2014
82+ $4.2653 $349.7546
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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