STW48N60M2-4 - STMicroelectronics

The STW48N60M2-4 is a high-performance, N-channel Power MOSFET produced by STMicroelectronics, a global leader in semiconductor solutions. This power MOSFET is designed to address a wide range of applications that require high efficiency, fast switching, and reliability. It is a part of STMicroelectronics' MDmesh™ M2 series, which is renowned for its excellent performance in high voltage applications.

With a maximum drain-source voltage (V<sub>DS) of 600V, the STW48N60M2-4 is well-suited for handling high voltage operations, making it an ideal choice for power supply units, lighting applications, welding equipment, and any circuitry that requires high voltage and power density. The device boasts a low on-resistance (R<sub>DS(on)) of just 0.029 Ohm, which significantly reduces conduction losses and improves overall system efficiency.

The STW48N60M2-4 also features a low gate charge (Q<sub>g), which enhances its fast switching capabilities. This characteristic is particularly beneficial in applications where switching speed is critical, such as in high-frequency converters. The power MOSFET also has a high continuous drain current (I<sub>D) of 48A, allowing it to handle substantial current loads without performance degradation.

The robustness of the STW48N60M2-4 is further enhanced by its 100% avalanche tested design, ensuring reliability and longevity even under harsh conditions. Additionally, the device comes in a TO-247 long leads package, which provides excellent thermal performance and simplifies the mounting process on a heatsink for effective heat dissipation.

For design engineers looking for a power MOSFET that offers a combination of high voltage capability, low power loss, and fast switching performance, the STW48N60M2-4 from STMicroelectronics is a compelling option. Its advanced features and robust design make it a versatile component suitable for a broad range of high-power and high-efficiency applications.