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STW58N65DM2AG

Part No STW58N65DM2AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 48A TO247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 37 Weeks
Features N-Channel 650 V 48A (Tc) 360W (Tc) Through Hole TO-247-3
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ DM2
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-247-3
Case / Package TO-247-3
Family Name STW58
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-16137-5, -1138-STW58N65DM2AG
Quantity per package 30
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898530-STW58N65DM2AG
Ultra Librarian 3D Model Ultra Librarian STW58N65DM2AG CAD Model

Description

STW58N65DM2AG - STMicroelectronics

The STW58N65DM2AG is a high-performance N-channel MDmesh™ DM2 Power MOSFET from STMicroelectronics, designed to meet the rigorous demands of power conversion applications. With a maximum V<sub>DS of 650V and a low on-resistance (R<sub>DS(on)) of 0.036 Ohm, this MOSFET is an ideal choice for high-efficiency power supplies, inverters, and motor control systems where power density and efficiency are critical.

Constructed using STMicroelectronics' innovative MDmesh™ technology, the STW58N65DM2AG MOSFET features an advanced structure that reduces on-state resistance while maximizing switching performance and reliability. This technology combines with the latest generation of high-voltage super-junction design, which allows for reduced conduction losses and improved thermal characteristics.

The STW58N65DM2AG is housed in a robust TO-247 package, which provides excellent thermal performance and is suitable for high-power applications. Its high current carrying capability and fast switching speed make it a versatile component for a wide range of high-performance designs.

  • Key Features:
    • 650V drain-source breakdown voltage (V<sub>DS)
    • Low threshold voltage (V<sub>GS(th))
    • Low gate charge (Q<sub>g) for improved switching performance
    • High avalanche ruggedness for increased reliability
    • 100% avalanche tested to ensure robustness

      With its superior electrical characteristics, the STW58N65DM2AG is designed to reduce conduction and switching losses, which translates into increased efficiency in your applications. Whether it's for hard-switching or resonant topologies, this MOSFET provides designers with a flexible solution to optimize their power conversion systems.

      The STW58N65DM2AG also features Zener-protected gate, which helps to safeguard the device against overvoltage conditions, ensuring a longer operational lifespan and stability in a variety of challenging environments.

      STMicroelectronics is a global semiconductor leader, and the STW58N65DM2AG is a testament to their commitment to providing high-quality, innovative products that push the boundaries of what's possible in power electronics. Whether you're designing for industrial, consumer, or automotive applications, this MOSFET is engineered to deliver top performance where it counts.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $18.8804 $56.6412
7+ $15.4917 $108.4419
10+ $15.0075 $150.0750
14+ $14.5234 $203.3276
18+ $14.0393 $252.7074
24+ $12.5870 $302.0880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,400 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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