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STWA40N95DK5

Part No STWA40N95DK5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ DK5
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3480 pF @ 100 V
Power Dissipation (Max) 450W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Type Through Hole
Supplier Device Package TO-247 Long Leads
Package / Case TO-247-3
Base Product Number STWA40
Other Names 497-17224
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278121-STWA40N95DK5
Ultra Librarian 3D Model Ultra Librarian STWA40N95DK5 CAD Model

Description

The STWA40N95DK5 is a state-of-the-art Silicon Carbide (SiC) Power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its innovative and reliable components. This power MOSFET is designed to meet the efficiency and performance demands of modern high-power applications, including electric vehicles, renewable energy inverters, and high-performance power supplies.

Key Features

  • High Voltage Rating: With a drain-source voltage (V<sub>DS) of 950V, the STWA40N95DK5 is capable of handling high voltage operations, making it suitable for a wide range of power applications.
  • Low On-Resistance: Featuring an on-resistance (R<sub>DS(on)) as low as 40 mΩ, this MOSFET ensures minimal conduction losses, leading to higher efficiency in power conversion.
  • Fast Switching Speed: The fast intrinsic diode with minimal reverse recovery charge (Q<sub>rr) allows for quick switching, reducing switching losses and improving overall system performance.
  • High-Temperature Operation: The STWA40N95DK5 can operate at junction temperatures up to 175°C, providing reliable performance even under extreme conditions.
  • Enhanced Ruggedness: Silicon Carbide technology offers increased ruggedness and thermal stability compared to traditional silicon devices.

Applications

The STWA40N95DK5 is ideal for a variety of applications where efficiency and power density are critical. Key applications include:

  • Electric Vehicle (EV) Traction Inverters
  • On-Board Chargers and DC/DC Converters for EVs
  • Solar Inverters and Photovoltaic Systems
  • Uninterruptible Power Supplies (UPS)
  • Switch Mode Power Supplies (SMPS)
  • Induction Heating Systems
  • High-Performance Power Converters

Advantages

The STWA40N95DK5 offers numerous advantages over traditional silicon MOSFETs, including lower switching and conduction losses, higher thermal conductivity, and reduced system size due to its ability to operate at higher frequencies. These features make it an excellent choice for designers looking to improve the efficiency, reliability, and form factor of their power conversion systems.

STMicroelectronics' commitment to excellence ensures that the STWA40N95DK5 is manufactured to the highest standards, providing robust and reliable performance for the most demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $39.2757 $78.5514
4+ $32.2262 $128.9048
5+ $31.2191 $156.0955
7+ $30.2121 $211.4847
9+ $29.2050 $262.8450
12+ $26.1838 $314.2056
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 64 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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