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STWA65N60DM6

Part No STWA65N60DM6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 38A TO247 / N-Channel 600 V 38A (Tc) Through Hole TO-247 Long Leads
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer STMicroelectronics
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Mounting Through Hole
Supplier Device Package TO-247 Long Leads
Case / Package TO-247-3
Base Product Number STWA65
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-18316,-1138-STWA65N60DM6
Standard Package 600
Win Source Part Number 1324669-STWA65N60DM6
Ultra Librarian 3D Model Ultra Librarian STWA65N60DM6 CAD Model

Description

The STWA65N60DM6 is a state-of-the-art power MOSFET designed by STMicroelectronics, a leader in semiconductor solutions. This device is part of the MDmesh™ DM6 series, which is renowned for its fast recovery diode and high efficiency in various applications. Engineered to cater to the demanding requirements of high-performance power electronics, the STWA65N60DM6 is an ideal choice for a wide range of applications including switch-mode power supplies (SMPS), lighting, welding, solar inverters, and industrial applications.

With a robust maximum voltage rating of 650V, this power MOSFET ensures reliable operation even under high voltage conditions. Its low on-resistance (R<sub>DS(on)) minimizes conduction losses, making it an energy-efficient option for designers. The device also boasts a high continuous drain current (I<sub>D) of up to 30A, which facilitates the handling of high current loads without compromising performance.

The STWA65N60DM6 incorporates advanced silicon technology to deliver fast switching speeds, which is crucial for reducing switching losses and improving the efficiency of power conversion systems. The MOSFET's fast recovery diode is specifically tailored for hard switching applications and contributes to the overall reduction of electromagnetic interference (EMI), enhancing the reliability and longevity of the end product.

STMicroelectronics has designed this MOSFET with a 100% avalanche tested ruggedness, ensuring that it can withstand harsh operating conditions and repetitive high-energy pulses. This feature provides an additional layer of protection and reliability for power circuits, making it a dependable component for industrial-grade applications.

Moreover, the STWA65N60DM6 comes in a TO-247 long leads package, which facilitates better heat dissipation and simplifies the thermal management of the system. The package is also designed for easy mounting on heat sinks, further enhancing its thermal performance.

In summary, the STWA65N60DM6 from STMicroelectronics is a high-performance power MOSFET that combines efficiency, speed, and reliability. It is an excellent choice for engineers looking to improve the performance and durability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.1232 $56.4928
9+ $11.5883 $104.2947
14+ $11.2262 $157.1668
19+ $10.8640 $206.4160
24+ $10.5019 $252.0456
32+ $9.4155 $301.2960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,010 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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