EN
  • EN
  • DE

STWA68N60M6

Part No STWA68N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 63A TO247 / N-Channel 600 V 63A (Tc) 390W (Tc) Through Hole TO-247 Long Leads
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 31.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 4360 pF @ 100 V
Power Dissipation (Max) 390W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 Long Leads
Package / Case TO-247-3
Base Product Number STWA68
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1341665-STWA68N60M6
Ultra Librarian 3D Model Ultra Librarian STWA68N60M6 CAD Model

Description

STWA68N60M6 - N-channel 600 V, 68 mOhm typ., 40 A MDmesh M6 Power MOSFET in a TO-247 long leads package by STMicroelectronics

The STWA68N60M6 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, designed to meet the efficiency and reliability requirements of modern high-power switching applications. This device is part of the MDmesh™ M6 series, which utilizes advanced ST's proprietary technology to achieve optimized on-resistance, dynamic performance, and energy efficiency.

With a voltage rating of 600 V, the STWA68N60M6 is well-suited for high-voltage applications, ensuring robustness and reliability even under stressful conditions. The typical on-resistance of 68 mOhm results in reduced conduction losses, making this MOSFET an excellent choice for energy-sensitive designs.

The 40 A current rating of the STWA68N60M6 indicates its capability to handle significant power, making it ideal for applications such as switch-mode power supplies, lighting, welding, solar inverters, and other power conversion systems. The TO-247 long leads package not only provides excellent thermal performance but also offers flexibility for PCB designers in terms of mounting and heat sinking.

Key features of the STWA68N60M6 include:

  • Ultra-low gate charge and capacitances for reduced switching losses
  • High dv/dt capability ensuring reliability in hard switching conditions
  • 100% avalanche tested, guaranteeing robustness and long-term reliability
  • Zener-protected gate, providing enhanced protection against overvoltage

The STWA68N60M6 also exhibits excellent body diode ruggedness, which is crucial for applications that require high-speed switching and those that encounter hard commutation. The combination of these features with the high-quality standards of STMicroelectronics ensures that the STWA68N60M6 is not just a component but a trusted solution for power management challenges.

In summary, the STWA68N60M6 from STMicroelectronics is a powerful and efficient solution for designers looking to improve system performance while maintaining energy efficiency and reliability in high-voltage, high-power applications.

You May Also Be Interested in

Infineon Technologies
Increased MOSFET dv/dt ruggedness
Lowest to $8.2310
NXP / Nexperia
N-channel TrenchMOS FET Rev. 01 — 4 October 2010
Lowest to $6.6447
Panjit
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Lowest to $0.0508
NEC
MOS FIELD EFFECT TRANSISTOR
Need more? Email Us
NEC
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Lowest to $0.3361
Toshiba Semiconductor and Storage
Switching Voltage Regulators
Lowest to $5.4227
Supertex, Inc
P-Channel Enhancement-Mode Vertical DMOS FETs
Lowest to $0.5971
Fairchild/ON Semiconductor
P-Channel 2.5V Specified PowerTrench MOSFET
Lowest to $0.1285
Rohm Semiconductor
1.5V Drive Pch MOSFET
Lowest to $5.3026

Top Sellers

Peregrine Semiconductor
RF ATTENUATOR 31.5DB 50OHM 20QFN
Lowest to $2.2891
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.3053
ON Semiconductor
MOSFET N-CH 20V 915MA SOT-416
Lowest to $0.0543
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $5.9399
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.9399
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
Atheros
Ethernet TXRX Single Chip 1-Port 3.3V 10Mbps/100Mbps/1000Mbps 48-Pin QFN EP Tray
Lowest to $2.6071
Bosch Sensortec
IMU ACCEL/GYRO I2C/SPI 14LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $3.6828
Bosch Sensortec
ACCELEROMETER 16LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $11.8797
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
Bosch Sensortec
SENSOR FLIPCORE/HALL SPI 12WLCSP / Geomagnetic Sensor
Lowest to $0.7841
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.9399
TDK InvenSense
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Lowest to $10.4542
TDK InvenSense
MOTION SENSOR / Accelerometer, Gyroscope, 6 Axis Sensor Output
Lowest to $17.8196
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.3053
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess