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STY34NB50

Part No STY34NB50
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 34A MAX247
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 223nC @ 10V
Max Input Capacitance 9100pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 450W (Tc)
Maximum Rds On at Id,Vgs 130 mOhm @ 17A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package MAX247
Dimension TO-247-3
Win Source Part Number 054067-STY34NB50
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STY34NB50 CAD Model

Description

The STY34NB50 from STMicroelectronics is a robust and high-performance N-Channel MOSFET designed to deliver efficiency and reliability for a wide range of applications. This power MOSFET is part of ST's MDmesh™ series, which is renowned for its excellent on-state resistance (R<sub>DS(on)) and superior switching performance.

Key Features

  • High Voltage Capability: The STY34NB50 is capable of handling high voltages, with a drain-source voltage (V<sub>DS) of up to 500V, making it suitable for high voltage applications.
  • Low On-Resistance: With an R<sub>DS(on) value as low as 0.085Ω, this MOSFET ensures minimal power loss and improved efficiency in electronic circuits.
  • High Current Rating: It can support a continuous drain current (I<sub>D) of up to 34A, providing ample current handling capability for demanding power applications.
  • Enhanced Switching Performance: The device offers fast switching speeds, which is crucial for reducing switching losses and improving performance in high-frequency power conversion systems.
  • MDmesh™ Technology: Utilizing ST's innovative MDmesh™ technology, the STY34NB50 offers a perfect blend of low gate charge (Q<sub>g), low crss, and high dv/dt capability, which enhances the overall efficiency of power management solutions.
  • Robust Design: The MOSFET is designed to withstand harsh conditions and is characterized by its high ruggedness and reliability.

Applications

The STY34NB50 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High Efficiency DC/DC Converters
  • Motor Control Systems
  • LED Lighting Solutions
  • Power Factor Correction (PFC) Circuits
  • Welding Equipment
  • And other high power density applications that require efficient power conversion.

With its outstanding electrical characteristics and thermal performance, the STY34NB50 is an excellent choice for designers looking to optimize their power systems for efficiency and reliability. STMicroelectronics' commitment to quality ensures that this MOSFET meets the stringent requirements of industrial and commercial electronic products.

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