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VND10N06-1

Part No VND10N06-1
Manufacturer STMicroelectronics
Catalog PMIC - Power Distribution Switches, Load Drivers
Description ISO HIGH SIDE SMART POWER SOLID STATE RELAY | MOSFET POWER 60V 10A IPAK
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Switch Type General Purpose
Output Configuration Low Side
Output Type N-Channel
Interface On/Off
Supply Voltage Not Required
Current - Output (Maximum) 6A
Rds On 150mOhm
Input Type Non-Inverting
Fault Protection Current Limiting (Fixed), Over Temperature, Over Voltage
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK
Family Part Number VN*10N
Manufacturer Pack Quantity 75
MSL Level 3 (168 Hours)
Win Source Part Number 1279572-VND10N06-1
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian VND10N06-1 CAD Model

Description

STMicroelectronics VND10N06-1: OMNIFET II Fully Autoprotected Power MOSFET

The VND10N06-1, part of the OMNIFET II family, is a fully autoprotected power MOSFET designed and manufactured by STMicroelectronics. This robust component is engineered to deliver high performance and reliability for a wide range of applications requiring efficient power management and distribution.

Key Features

  • Current Limiting Capability: The VND10N06-1 is equipped with a current limiting feature that helps prevent damage to the MOSFET and the load during overcurrent conditions.
  • Thermal Shutdown: An integrated thermal shutdown mechanism enhances the safety and longevity of the device by turning it off when excessive temperatures are detected.
  • Short Circuit Protection: The MOSFET includes short circuit protection, which is crucial for preventing catastrophic failures in the event of a load short circuit.
  • Intrinsic Clamp: An intrinsic clamp diode provides overvoltage protection for inductive loads, ensuring the device's stability under transient conditions.
  • Gate Charge Minimization: The VND10N06-1 is designed with a focus on minimizing gate charge, which translates to reduced switching losses and improved overall efficiency.
  • Linear Current Limitation: The linear current limitation feature ensures a smooth and controlled response to overcurrent events, reducing the risk of abrupt interruptions.

Applications

The VND10N06-1 is well-suited for a variety of applications, including but not limited to:

  • Automotive systems
  • DC motor control
  • Power management modules
  • Relay and solenoid drivers
  • Lamp drivers

Technical Specifications

With a drain-source voltage (V<sub>DS) of 60V and a continuous drain current (I<sub>D) of 10A, the VND10N06-1 is capable of handling significant power. Its low threshold voltage ensures that it can be driven at lower voltages, making it compatible with a variety of control circuits.

Quality and Reliability

STMicroelectronics is known for its commitment to quality and the VND10N06-1 is no exception. Manufactured to meet high standards, this power MOSFET is designed for durability and consistent performance, making it a reliable choice for designers and engineers looking to incorporate a trusted power management solution into their systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7368 $60.7880
80+ $1.4251 $114.0080
125+ $1.3805 $172.5625
170+ $1.3360 $227.1200
220+ $1.2915 $284.1300
295+ $1.1579 $341.5805
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,842 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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