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TS10K60-04 D3

Part No TS10K60-04 D3
Manufacturer Taiwan Semiconductor
Catalog OEM Parts (T - Z)
Description 10A, 600V, Standard Bridge Rectifier
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Win Source Part Number 1101255-TS10K60-04 D3
Categories OEM Parts(T-Z)
Manufacturer Taiwan Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TS10K60-04 D3 CAD Model

Description

The TS10K60-04 D3 is a high-voltage N-channel MOSFET from Taiwan Semiconductor, designed for high-efficiency power switching applications. This MOSFET features a fast switching speed and low on-resistance, which minimizes power losses and improves overall system efficiency. The D3 suffix likely refers to a specific package or production revision.

Applications:

  • Switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • DC-DC converters
  • Uninterruptible power supplies (UPS)
  • Motor control circuits
  • LED lighting drivers
  • Solar inverters
  • Welding machines

Features:

  • High blocking voltage (typically 600V)
  • Low on-resistance (RDS(on)) minimizing conduction losses
  • Fast switching speed, reducing switching losses
  • Avalanche rated, providing robustness against voltage transients
  • Gate oxide ruggedness, ensuring long-term reliability
  • Lead-free and RoHS compliant, meeting environmental standards
  • Available in various through-hole and surface-mount packages
  • Optimized gate charge for efficient switching

Benefits:

  • Increased efficiency in power conversion applications
  • Reduced heat generation due to lower power losses
  • Improved system reliability with avalanche rating
  • Smaller and lighter designs due to efficient heat dissipation
  • Lower component count and cost savings
  • Compliance with environmental regulations

Additional Details:

The TS10K60-04 D3 MOSFET is typically packaged in a TO-220, TO-220F, or similar package for easy mounting and heat sinking. The specific RDS(on) value varies depending on the gate-source voltage and temperature, but it is generally very low to minimize conduction losses. The gate charge (Qg) is optimized to reduce switching losses and improve overall efficiency. The MOSFET is designed to withstand high voltage transients and provides robust performance in demanding applications. Taiwan Semiconductor employs stringent quality control measures to ensure consistent performance and reliability. Datasheets provide detailed electrical characteristics, thermal parameters, and safe operating area (SOA) information for optimal design considerations. Careful consideration of thermal management is crucial for maximizing the performance and lifespan of the device.

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