The TSM2307CX is a P-Channel enhancement mode MOSFET from Taiwan Semiconductor. It is designed for low voltage, high-side load switching applications. The device is available in a small SOT-23 package, making it suitable for space-constrained applications. This MOSFET features low on-resistance, which minimizes power losses and improves efficiency in switching circuits.

Applications:

• Load switching in portable devices.
• Power management in battery-powered systems.
• DC-DC converters.
• Level shifting circuits.
• Small signal switching applications.

Features:

• P-Channel MOSFET.
• Low on-resistance (RDS(on)).
• Low gate threshold voltage.
• Small SOT-23 package.
• Lead-free and RoHS compliant.

Benefits:

• Efficient load switching with minimal power loss.
• Easy to drive with low voltage logic.
• Space-saving design for compact applications.
• Environmentally friendly due to lead-free and RoHS compliance.
• Improved battery life in portable devices.

Additional Details:

The TSM2307CX has a drain-source voltage (VDS) rating of -30V and a continuous drain current (ID) rating of -2.7A. The typical on-resistance (RDS(on)) is 110 mΩ at VGS = -10V and 180 mΩ at VGS = -4.5V. The gate threshold voltage (VGS(th)) is typically -2.0V. The power dissipation is 1.38W. The operating and storage temperature range is -55°C to +150°C. The device is suitable for automatic insertion and reflow soldering. The gate charge is low, contributing to fast switching speeds. This MOSFET is frequently used in applications where a small size and low power consumption are crucial.