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TSM4NB60CI

Part No TSM4NB60CI
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 600V, 4A, SINGLE N-CHANNEL POWER
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220
Package / Case TO-220-3 Full Pack, Isolated Tab
Base Product Number TSM4
Standard Package 4,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 841109-TSM4NB60CI
Ultra Librarian 3D Model Ultra Librarian TSM4NB60CI CAD Model

Description

The 841109-TSM4NB60CI is an N-Channel MOSFET transistor suitable for various applications.

  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 4A @ 25°C
  • Maximum On-Resistance: 2.5Ohm @ 2A and 10V
  • Gate Charge: 14.5nC @ 10V
  • Input Capacitance: 500pF @ 25V
  • Mounting: Through-hole mountable
  • Package: Standard package of 4,000 pcs
  • Temperature Range: -55°C to 150°C
  • Manufacturer: Taiwan Semiconductor
  • Status: Active
  • REACH Regulations: Unaffected

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0755 $62.2650
70+ $1.7029 $119.2030
110+ $1.6498 $181.4780
145+ $1.5966 $231.5070
190+ $1.5433 $293.2270
255+ $1.3837 $352.8435
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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