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Same model may have multiple batches, images only for reference.
TSM60N06CP ROG
Same model may have multiple batches, images only for reference.

TSM60N06CP ROG

Part No TSM60N06CP ROG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, N-CHANNEL, TRENC
Datasheet
TSM60N06CP ROG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 81nC @ 10V
Max Input Capacitance 4382pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 44.6W (Tc)
Maximum Rds On at Id,Vgs 7.3 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1114750-TSM60N06CP ROG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TSM60N06CP ROG CAD Model

Description

The Taiwan Semiconductor N-Channel MOSFET is a high-quality electronic component that is perfect for various applications.

  • Manufacturer: Taiwan Semiconductor
  • Channel Polarity: N-Channel
  • Maximum Power Dissipation: 44.6W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 66A (Tc)
  • Maximum Rds On @ Id,Vgs: 7.3 mOhm @ 30A, 10V
  • Mounting Type: SMD (SMT)
  • Package: TO-252, (D-Pak)

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