The TSM60NB260CI C0G is a discrete semiconductor product, specifically a transistor, manufactured by Taiwan Semiconductor Corporation.

• Transistor Type: N-Channel MOSFET (Metal Oxide)
• Vdss (Drain to Source Voltage): 600 V
• Id (Continuous Drain Current) @ 25°C: 13A (Tc)
• Rds On (Max) @ Id, Vgs: 260mOhm @ 3.9A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Power Dissipation (Max): 32.1W (Tc)
• Qg (Gate Charge) (Max) @ Vgs: 30 nC @ 10 V
• Ciss (Input Capacitance) (Max) @ Vds: 1273 pF @ 100 V
• Vgs (Max): ±30V
• Operating Temperature Range: -55°C ~ 150°C (TJ)
• MSL Level: 1 (Unlimited)
• HTSUS: 8541.29.0095