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Same model may have multiple batches, images only for reference.
TK5A60W,S4VX(M
Same model may have multiple batches, images only for reference.

TK5A60W,S4VX(M

Part No TK5A60W,S4VX(M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 600V 5.4A 3-Pin(3+Tab) TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 5.4 A
Drain to Source Resistance 900 mΩ
Element Configuration Single
Fall Time 7 ns
Gate to Source Voltage (Vgs) 30 V
Height 15 mm
Input Capacitance 380 pF
Length 10 mm
Max Operating Temperature 150 °C
Max Power Dissipation 30 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 30 W
Radiation Hardening No
Rise Time 18 ns
RoHS Compliant
Turn-Off Delay Time 50 ns
Turn-On Delay Time 40 ns
Width 4.5 mm
Win Source Part Number 1187660-TK5A60W,S4VX(M
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK5A60W,S4VX(M CAD Model

Description

The TK5A60W,S4VX(M) is a transistor device used in FETs, MOSFETs - RF applications.

  • Power Dissipation: 30 W
  • Continuous Drain Current (ID): 5.4 A
  • Drain to Source Resistance: 900 mΩ
  • Gate to Source Voltage (Vgs): 30 V
  • Rise Time: 18 ns
  • Fall Time: 7 ns
  • Mounting Type: Through Hole
  • Length: 10 mm
  • Width: 4.5 mm
  • Height: 15 mm

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