The TSM70N900CPROG is an N-Channel MOSFET manufactured by Taiwan Semiconductor. This high-voltage MOSFET is designed for applications requiring robust performance and efficiency. Its high breakdown voltage makes it suitable for power supplies, inverters, and other high-voltage switching applications. The device is engineered for reliable operation in demanding environments.

Applications:

• Power supplies (SMPS, UPS)
• Inverters
• High-voltage switching
• Renewable energy systems (solar inverters)
• Motor control (high-voltage)

Features:

• N-Channel enhancement mode
• High voltage capability (900V)
• Low on-resistance (RDS(on))
• Fast switching speed
• RoHS compliant
• Halogen-free

Benefits:

• High efficiency in high-voltage applications
• Reduced power dissipation, leading to cooler operation
• Simplified gate drive requirements
• Increased system reliability
• Environmentally responsible

Additional Details:

The TSM70N900CPROG is typically packaged in a TO-247 or similar high-power package. Key parameters include drain-source voltage (VDS), gate-source voltage (VGS), continuous drain current (ID), and pulsed drain current (IDM). The 'PROG' suffix usually indicates specific manufacturing processes or lead-free compliance. The datasheet includes comprehensive data on thermal resistance, avalanche energy, and body diode characteristics. Consult the official Taiwan Semiconductor datasheet for complete and accurate specifications. The device is designed to withstand repetitive avalanche conditions. This MOSFET is often used in applications requiring high reliability and a long operational lifespan. It is designed to minimize switching losses. Proper thermal management is essential for reliable operation in high-power applications. The gate threshold voltage is a key parameter for determining drive requirements.