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Same model may have multiple batches, images only for reference.
TSM7NC65CF Taiwan Semiconductor
Same model may have multiple batches, images only for reference.

TSM7NC65CF

Part No TSM7NC65CF
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 650V, 7A, SINGLE N-CHANNEL POWER
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor Corporation
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1169 pF @ 50 V
FET Feature -
Power Dissipation (Max) 44.6W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220S
Package / Case TO-220-3 Full Pack
Base Product Number TSM7
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380176-TSM7NC65CF
Ultra Librarian 3D Model Ultra Librarian TSM7NC65CF CAD Model

Description

The TSM7NC65CF is a N-Channel MOSFET transistor from Taiwan Semiconductor Corporation.

  • Series: TSM7
  • Package: TO-220-3 Full Pack
  • Drain to Source Voltage (Vdss): 650 V
  • Continuous Drain Current (Id): 7A @ 25°C
  • On-Resistance (Rds On): 1.35 Ohm @ 2A and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 4.5V @ 250μA
  • Gate Charge (Qg): 24 nC @ 10V
  • Input Capacitance (Ciss): 1169 pF @ 50V
  • Power Dissipation: 44.6W
  • Mounting Type: Through Hole
  • REACH: Unaffected

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