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Same model may have multiple batches, images only for reference.
TSM85N10CZ C0G Real Image
Same model may have multiple batches, images only for reference.

TSM85N10CZ C0G

Part No TSM85N10CZ C0G
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, N-CHANNEL, TRENC
Datasheet
TSM85N10CZ C0G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 154nC @ 10V
Max Input Capacitance 3900pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 210W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1114755-TSM85N10CZ C0G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TSM85N10CZ C0G CAD Model

Description

The TSM85N10CZ C0G MOSFET is a high-performance N-channel power MOSFET designed for use in a variety of applications.

  • Maximum Power Dissipation: 210W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 81A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 10 mOhm @ 40A, 10V
  • Package: TO-220-3
  • Maximum Gate-Source Voltage: ±20V

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