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TSM900N10CP

Part No TSM900N10CP
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 100V, 15A, SINGLE N-CHANNEL POWE
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor Corporation
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 50 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number TSM900
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380179-TSM900N10CP
Ultra Librarian 3D Model Ultra Librarian TSM900N10CP CAD Model

Description

The TSM900N10CP is a N-Channel MOSFET transistor from Taiwan Semiconductor Corporation.

  • Series: TSM900
  • Package: TO-252-3, DPak
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id) @ 25°C: 15A
  • Maximum On-Resistance (Rds On) @ 5A, 10V: 90mOhm
  • Gate-Source Threshold Voltage (Vgs(th)) @ 250μA: 2.5V
  • Gate Charge (Qg) @ 10V: 9.3 nC
  • Input Capacitance (Ciss) @ 50V: 1480 pF
  • Maximum Power Dissipation: 50W
  • Mounting Type: Surface Mount
  • REACH: Unaffected

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2774 $63.8700
115+ $1.0482 $120.5430
175+ $1.0154 $177.6950
240+ $0.9826 $235.8240
305+ $0.9499 $289.7195
410+ $0.8516 $349.1560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,100 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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