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CSD13302WT

Part No CSD13302WT
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description CHANNEL NEXFET POWER MOSFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.3V @ 250μA
Max Gate Charge 7.8nC @ 4.5V
Max Input Capacitance 862pF @ 6V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 17.1 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-DSBGA (1x1)
Dimension 4-UFBGA, DSBGA
Win Source Part Number 1030581-CSD13302WT
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian CSD13302WT CAD Model

Description

Introducing the CSD13302WT NexFET™ Power MOSFET by Texas Instruments

The CSD13302WT is a state-of-the-art power MOSFET designed and manufactured by Texas Instruments, a leader in the semiconductor industry. This high-performance transistor is part of the NexFET™ product line, which is renowned for its advanced technology that delivers both high efficiency and power density—two critical factors in modern power supply designs.

Key Features of the CSD13302WT:

  • Low On-Resistance (RDS(on)): The device boasts an ultra-low on-resistance of just 25 mΩ at VGS = 4.5V, which significantly reduces conduction losses and enhances overall efficiency.
  • Powerful Performance: With a continuous drain current (ID) of 24 A, this MOSFET can handle high current applications with ease, making it suitable for a broad range of power management tasks.
  • Compact Footprint: The CSD13302WT comes in a small 2mm x 2mm SON package, which helps designers to save space on their PCBs without compromising on power capabilities.
  • High Thermal Performance: Its excellent thermal characteristics ensure reliable operation even under high stress and temperature conditions.
  • Low Qg and Qsw: The device features low total gate charge and low switch charge, which minimizes switching losses and makes it ideal for high-frequency applications.

Applications:

The versatility of the CSD13302WT allows it to be used in a wide array of applications, including:

  • DC/DC converters
  • Motor control circuits
  • Power management for CPUs, GPUs, and memory
  • Point of Load (POL) solutions
  • Battery powered devices
  • Synchronous buck converters

Why Choose the CSD13302WT?

Engineers and designers looking for a robust, efficient, and space-saving power MOSFET will find the CSD13302WT to be an exceptional choice. Its low on-resistance and high current handling capabilities ensure minimal power loss, while its compact size allows for more flexible design options. Furthermore, the high thermal performance and reliability of the CSD13302WT make it a go-to component for applications demanding long-term stability and endurance.

The CSD13302WT by Texas Instruments represents a blend of cutting-edge technology with practical design considerations, offering a high-quality solution for today's power management challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3481 $50.4745
355+ $0.2857 $101.4235
545+ $0.2767 $150.8015
750+ $0.2678 $200.8500
970+ $0.2589 $251.1330
1,295+ $0.2321 $300.5695
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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