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CSD13383F4T

Part No CSD13383F4T
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 3PICOSTAR
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.25V @ 250μA
Max Gate Charge 2.6nC @ 4.5V
Max Input Capacitance 291pF @ 6V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 44 mOhm @ 500mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-PICOSTAR
Dimension 3-XFDFN
Win Source Part Number 1030585-CSD13383F4T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian CSD13383F4T CAD Model

Description

Introducing the CSD13383F4T from Texas Instruments

The CSD13383F4T is a state-of-the-art N-channel NexFET™ power MOSFET brought to you by Texas Instruments, a leader in semiconductor design and manufacturing. This compact, high-performance component is designed with the latest technology to provide efficient power management and conversion in a wide array of electronic applications.

Key Features

  • Low On-Resistance: The CSD13383F4T boasts an ultra-low on-resistance (RDS(on)), which significantly reduces power losses and improves overall efficiency in power conversion circuits.
  • Advanced Construction: Utilizing Texas Instruments' advanced silicon technology, this MOSFET offers superior thermal performance and reliability, making it suitable for demanding environments and applications.
  • Compact Size: With its small form factor, the CSD13383F4T is ideal for space-constrained applications, allowing designers to minimize the footprint of their power supply circuits without sacrificing performance.
  • High Continuous Drain Current: The device is capable of supporting a high continuous drain current (ID), which enables it to handle high power levels required by modern electronic devices.

Applications

The versatility of the CSD13383F4T makes it suitable for a broad range of applications, including:

  • DC/DC converters
  • Power management for portable electronics
  • Load switches
  • Battery management systems
  • Motor control circuits

Technical Specifications

Parameter Value
Drain-Source Voltage (VDS) 12V
Continuous Drain Current (ID) 54A
On-Resistance (RDS(on)) 4.5 mΩ
Package SON-3.3

For designers seeking a MOSFET that offers excellent performance in a small package, the CSD13383F4T from Texas Instruments is an ideal choice. By integrating this component into your design, you can achieve efficient power management while maintaining a compact and reliable product design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2406 $50.5260
510+ $0.1975 $100.7250
785+ $0.1913 $150.1705
1,085+ $0.1851 $200.8335
1,400+ $0.1790 $250.6000
1,875+ $0.1604 $300.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,131 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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