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CSD18503Q5A

Part No CSD18503Q5A
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 8SON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 19A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 2640pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-VSON (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 1030627-CSD18503Q5A
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian CSD18503Q5A CAD Model

Description

Introducing the CSD18503Q5A N-Channel NexFET™ Power MOSFET by Texas Instruments

The CSD18503Q5A is a state-of-the-art N-Channel power MOSFET from Texas Instruments, designed to deliver high-efficiency power management and conversion for a wide range of applications. This device is part of TI's NexFET™ product line, which is renowned for its advanced technology that optimizes power efficiency and thermal performance.

With a continuous drain current of 100 A and a low on-resistance of 2.4 mΩ at a V<sub>GS of 10V, the CSD18503Q5A is a robust solution for high-power-density requirements. Its low gate charge and input capacitance ensure that switching losses are minimized, which is essential for high-frequency power switching applications.

The CSD18503Q5A operates over a wide temperature range, making it suitable for challenging environmental conditions. It is housed in a compact Son 5x6mm plastic package, which not only saves space but also offers excellent power dissipation characteristics. This packaging is designed to be compatible with standard PCB manufacturing processes, simplifying the integration of this MOSFET into various designs.

Key features of the CSD18503Q5A include:

  • Ultra-Low On-Resistance (R<sub>DS(on)): 2.4 mΩ at V<sub>GS = 10V
  • High Continuous Drain Current (I<sub>D): 100 A
  • Advanced Power Packaging: Son 5x6mm footprint for space-saving and thermal efficiency
  • Optimized Gate Charge (Q<sub>g): Reduces switching losses for high-efficiency power conversion
  • Wide Operating Temperature Range: Ensures reliability across various environmental conditions

This MOSFET is ideal for a range of applications including synchronous buck converters, server and telecom power supplies, OR-ing and e-fuse switches, motor drives, and battery management systems. Its performance is tailored for systems where efficiency and power density are critical, such as in computing, networking, and industrial sectors.

The CSD18503Q5A from Texas Instruments represents a blend of cutting-edge technology and robust design, ensuring that it meets the stringent requirements of modern high-performance power systems. For designers and engineers looking to enhance the efficiency and reliability of their power management solutions, the CSD18503Q5A offers an outstanding choice.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4327 $57.3080
100+ $1.1756 $117.5600
150+ $1.1388 $170.8200
205+ $1.1021 $225.9305
265+ $1.0653 $282.3045
355+ $0.9551 $339.0605
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,829 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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