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CSD19501KCS

Part No CSD19501KCS
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 100A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.2V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 3980pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 217W (Tc)
Maximum Rds On at Id,Vgs 6.6 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 202951-CSD19501KCS
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian CSD19501KCS CAD Model

Description

Product Description

The CSD19501KCS is a high-performance MOSFET, engineered to meet the demands of modern electronic applications. Designed with superior efficiency and reliability in mind, this device is ideal for high-frequency switching applications.

Features and Benefits

  • Low on-resistance for minimized power loss.
  • Enhanced thermal performance.
  • High-speed switching capability.
  • Rugged and reliable construction.

Applications

  • Power supply circuits.
  • DC-DC converters.
  • Motor control applications.
  • Lighting systems.

Additional Details

The CSD19501KCS is built to withstand challenging environments, making it suitable for both consumer and industrial applications requiring efficiency and robustness.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.1579 $51.7896
57+ $1.7706 $100.9242
88+ $1.7153 $150.9464
121+ $1.6600 $200.8600
156+ $1.6046 $250.3176
209+ $1.4386 $300.6674
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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Shipping Information

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