Product Overview: TPS51200DRCT by Texas Instruments
The TPS51200DRCT from Texas Instruments is a versatile sink/source double data rate (DDR) termination regulator that is specifically designed to provide a high-efficiency, low-noise power solution for DDR SDRAM memory systems. This device is housed in a compact 10-VSON package, making it an ideal choice for space-constrained applications.
Key Features
- Integrated Power Solution: The TPS51200DRCT integrates both high-side and low-side MOSFETs, which simplifies the power design for DDR memory termination by reducing external component count.
- Voltage Range: It supports a wide input voltage range from 3 V to 28 V, making it suitable for various system architectures and ensuring compatibility with a broad range of DDR memory types.
- Adjustable Output: The output voltage can be adjusted to half the supply voltage (VDDQ/2) via an external divider, ensuring precise termination voltage for DDR2, DDR3, DDR3L, DDR4, LPDDR2, and LPDDR3 memory.
- High Accuracy: The regulator maintains a high accuracy of ±3% over temperature and line variations, which is critical for maintaining the signal integrity of high-speed memory interfaces.
- Sink/Source Capability: It can sink and source current up to 2 A, providing robust power delivery for active termination schemes in memory systems.
- Thermal Protection: Thermal shutdown protection is included to prevent damage from overheating, enhancing the reliability and longevity of the device.
Applications
The TPS51200DRCT is suitable for a wide range of applications that require stable and efficient DDR termination. These include:
- Notebook and desktop computers
- Server and networking equipment
- Graphics cards
- Set-top boxes and digital TVs
- Embedded computing systems
Conclusion
With its high integration, wide input voltage range, and adjustable output, the TPS51200DRCT is a comprehensive power management solution for DDR memory termination. Its compact size, high accuracy, and thermal protection make it an excellent choice for designers looking to optimize their power designs for memory-intensive applications.