The 1SS268(TE85L,F) is a silicon epitaxial planar diode manufactured by Toshiba Semiconductor and Storage. It is designed for high-speed switching applications.

Applications

• High-speed switching circuits
• Small signal detection
• Clipping circuits
• Protection circuits

Features

• Low forward voltage (VF)
• Fast reverse recovery time (trr)
• Small capacitance
• High reliability
• Surface mount package (SOD-882)

Benefits

• Improved switching performance: The fast reverse recovery time allows for efficient switching, reducing power loss and improving circuit performance.
• Compact design: The small surface mount package allows for miniaturization of electronic devices.
• Reliable operation: The diode's robust construction ensures stable performance and long operational life.
• Versatile application: Suitable for a wide range of high-speed switching and signal processing tasks.
• Reduced voltage drop: The low forward voltage minimizes voltage drop across the diode, enhancing circuit efficiency.

Additional Details

Absolute Maximum Ratings:

• Peak Reverse Voltage: 60V
• Average Rectified Forward Current: 100mA
• Forward Surge Current: 500mA
• Power Dissipation: 150mW
• Junction Temperature: 150°C
• Storage Temperature: -55 to 150°C

Electrical Characteristics (Ta=25°C):

• Forward Voltage (IF=10mA): 0.65V (typ.) / 0.80V (max.)
• Reverse Current (VR=60V): 1 μA (max.)
• Reverse Recovery Time (IF=10mA, VR=6V, RL=100Ω): 4ns (typ.)
• Total Capacitance (VR=0V, f=1MHz): 2.0 pF (typ.)

The 1SS268(TE85L,F) is typically used in applications where a fast switching speed and low capacitance are required. Its small size and surface mount package make it ideal for compact electronic devices. Its electrical characteristics and ratings must be carefully considered in circuit design to ensure reliable and efficient operation.