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2SA1163-GR,LF

Part No 2SA1163-GR,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 120V 0.1A SMINI
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 6V
Maximum Power Dissipation 150mW
Frequency - Transition 100MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 096800-2SA1163-GR,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA1163-GR,LF CAD Model

Description

2SA1163-GR,LF Transistor

The 2SA1163-GR,LF is a versatile PNP transistor that provides reliable performance for a range of electronic circuits, including low-level and medium-level amplification.

  • Applications/Projects:
    • Amplifiers
    • Signal processing modules
    • Switching circuits
    • Consumer electronics
  • Features and Benefits:
    • Low noise characteristics
    • High current gain bandwidth product
    • Emitter lead formed for surface mounting
    • Energy efficient design
  • Additional Details:
    • Maximum Power Dissipation: 400mW
    • RoHS and REACH compliant
    • Complies with AEC-Q101 standards
    • Compact footprint

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Pricing & Ordering

Quantity Unit Price Ext. Price
920+ $0.0546 $50.2320
2,235+ $0.0448 $100.1280
3,460+ $0.0434 $150.1640
4,765+ $0.0420 $200.1300
6,160+ $0.0406 $250.0960
8,245+ $0.0364 $300.1180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 526,700 pieces
MOQ: 920 pcs
Order Increment : 1 pcs
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