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2SA1225

Part No 2SA1225
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 160V 1.5A PW-MOLD
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage 160V
Max Vce (sat) 1.5V @ 50mA, 500mA
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 120 @ 100mA, 5V
Maximum Power Dissipation 1W
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PW-MOLD
Win Source Part Number 197481-2SA1225
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SA1225 CAD Model

Description

Description

The 2SA1225 is a PNP bipolar junction transistor designed for high power amplification and switching. This component is ideal for use in various consumer electronics due to its reliability and efficiency.

Applications

  • Audio Amplifiers
  • Power Management
  • Switching Circuits
  • Signal Processing

Features and Benefits

  • High Collector-Emitter Voltage: Vceo = 180V
  • Power Dissipation: 25W, ensuring effective power handling
  • High current capability: 1.5A, suitable for heavy load applications
  • Reliable Thermal Management

This component is well-suited for numerous electronic applications, providing dependable performance across a range of temperatures and conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
430+ $0.1164 $50.0520
920+ $0.1090 $100.2800
1,425+ $0.1053 $150.0525
2,045+ $0.0980 $200.4100
2,655+ $0.0943 $250.3665
3,315+ $0.0906 $300.3390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 430 pcs
Order Increment : 1 pcs
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