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Same model may have multiple batches, images only for reference.
2SA1315-Y,HOF(M Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SA1315-Y,HOF(M

Part No 2SA1315-Y,HOF(M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 2A 80V TO226-3
Datasheet
2SA1315-Y,HOF(M Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 500mV @ 50mA, 1A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 70 @ 500mA, 2V
Maximum Power Dissipation 900mW
Frequency - Transition 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 1004158-2SA1315-Y,HOF(M
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA1315-Y,HOF(M CAD Model

Description

The 2SA1315-Y,HOF(M is a PNP transistor manufactured by Toshiba Semiconductor and Storage.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Maximum Current Collector: 2A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
  • Frequency Transition: 80MHz
  • Typical Gain (hFE) (Min): 70 @ 500mA, 2V
  • Maximum Power Dissipation: 900mW
  • Collector Cut-off Current (Max): 1μA (ICBO)
  • Category: Discrete Semiconductor Products

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