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Same model may have multiple batches, images only for reference.
2SA1362-GR,LF
Same model may have multiple batches, images only for reference.

2SA1362-GR,LF

Part No 2SA1362-GR,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 15V 0.8A SMINI / Bipolar (BJT) Transistor PNP 15 V 800 mA 120MHz 200 mW Surface Mount S-Mini
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 15 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 8mA, 400mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 1V
Power - Max 200 mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini
Base Product Number 2SA1362
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 855030-2SA1362-GR,LF
Ultra Librarian 3D Model Ultra Librarian 2SA1362-GR,LF CAD Model

Description

The 2SA1362-GR,LF is a PNP bipolar transistor designed for various applications. It has a maximum power dissipation of 200mW and a maximum collector-emitter breakdown voltage of 15V.

  • Maximum Collector Current: 800mA
  • Vce Saturation: 200mV @ 8mA and 400mA
  • DC Current Gain (hFE): 200 @ 100mA and 1V
  • Mounting Type: Surface Mountable
  • Package: TO-236-3, SC-59, SOT-23-3
  • Operating Temperature: 150°C
  • Manufacturer: Toshiba Semiconductor and Storage

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Quantity Unit Price Ext. Price
455+ $0.1108 $50.4140
1,105+ $0.0909 $100.4445
1,705+ $0.0881 $150.2105
2,350+ $0.0852 $200.2200
3,035+ $0.0824 $250.0840
4,060+ $0.0739 $300.0340
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Availability: 389,600 pieces
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