The 2SA1382 is a PNP silicon epitaxial transistor manufactured by Toshiba Semiconductor. This transistor is designed for high-power audio amplifier applications, especially in the output stage. It is known for its high current and voltage handling capabilities, as well as its excellent linearity, making it suitable for delivering high-fidelity audio reproduction.

Applications:

• High-power audio amplifiers (output stage)
• Hi-Fi audio systems
• Professional audio equipment
• Home theater systems
• Power amplifiers

Features:

• PNP Silicon Epitaxial Transistor
• High Collector Current (IC)
• High Collector-Emitter Voltage (VCEO)
• Low Saturation Voltage
• Excellent Linearity

Benefits:

• High-fidelity audio reproduction
• Efficient power handling
• Low distortion
• Stable performance under varying load conditions
• Enhanced reliability

Specifications (Typical):

Typical specifications for the 2SA1382 transistor include:

• Collector-Base Voltage (VCBO): -230V
• Collector-Emitter Voltage (VCEO): -230V
• Emitter-Base Voltage (VEBO): -5V
• Collector Current (IC): -15A
• Peak Collector Current (ICM): -30A
• Collector Power Dissipation (PC): 150W
• DC Current Gain (hFE): 50-150
• Operating Temperature Range: -55°C to +150°C

The 2SA1382 is typically packaged in a TO-3PL or similar high-power package to facilitate effective heat dissipation. Its robust specifications make it a reliable choice for demanding audio amplifier designs, contributing to clear and powerful sound output.