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Same model may have multiple batches, images only for reference.
IPP100N04S2L03AKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP100N04S2L03AKSA1

Part No IPP100N04S2L03AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A TO220-3 / Trans MOSFET N-CH 40V 100A Automotive 3-Pin(3+Tab) TO-220 Tube
Datasheet
IPP100N04S2L03AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 230nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6000pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 3.3 mOhm @ 80A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO220-3-1
Package TO-220-3
Win Source Part Number 776903-IPP100N04S2L03AKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPP100N04S2L03AKSA1
Introduction Date March 02, 2006
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IPP100N04S2L03AKSA1 CAD Model

Description

The Infineon Technologies IPP100N04S2L03AKSA1 is a MOSFET transistor that is part of the OptiMOS series.

  • Continuous Drain Current: 100A @ 25°C
  • Maximum Drain-Source Voltage: 40V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Gate Charge: 230nC @ 10V
  • Input Capacitance: 6000pF @ 25V
  • Maximum Power Dissipation: 300W @ Tc
  • Rds on: 3.3 mOhm @ 80A and 10V
  • Package: TO-220-3
  • Mounting: through-hole
  • Application: discrete semiconductor products
  • ECCN: EAR99
  • Estimated EOL date: obsolete / end of life

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