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2SA1425-Y,T2F

Part No 2SA1425-Y,T2F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 800MA 120V SC71
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 1V @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 100mA, 5V
Maximum Power Dissipation 1W
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package MSTM
Win Source Part Number 153659-2SA1425-Y,T2F
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA1425-Y,T2F CAD Model

Description

Product Description for 2SA1425-Y,T2F

The 2SA1425-Y,T2F is a variant of the 2SA1425-Y PNP transistor, offering similar applications while providing specific adaptations for improved suitability in certain circuits. Its design is optimized for high-frequency operations, making it useful for more specialized tasks.

  • Applications:
    • High-frequency amplification systems
    • Digital electronics
    • Communication devices
    • Robotics and automation
  • Features & Benefits:
    • Tuned for enhanced performance at high frequencies
    • Reliable and stable in critical applications
    • Extended temperature range for extra durability
    • Easy integration into existing designs
  • Additional Details:

    This component is a preferable choice when needing a robust transistor capable of operating efficiently at higher frequencies, which makes it versatile for advanced applications in communication and digital electronics.

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