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Same model may have multiple batches, images only for reference.
2SA1955FVATPL3Z Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SA1955FVATPL3Z

Part No 2SA1955FVATPL3Z
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 12V 0.4A VESM
Datasheet
2SA1955FVATPL3Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 400mA
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Max Vce (sat) 250mV @ 10mA, 200mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 300 @ 10mA, 2V
Maximum Power Dissipation 100mW
Frequency - Transition 130MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CST3
Win Source Part Number 097575-2SA1955FVATPL3Z
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA1955FVATPL3Z CAD Model

Description

Description

The 2SA1955FVATPL3Z is a high-reliability PNP transistor, crafted for optimal electrical performance in complex circuits. Its robust design ensures stable operation under various electrical loads.

Applications

  • Advanced Amplifier Systems
  • Voltage Regulation
  • Signal Processing Units
  • Electronics Hobby Projects

Features and Benefits

  • High operational stability across load variations.
  • Optimized for minimal power loss, preserving circuit efficiency.
  • Designed for easy integration into existing systems.

Additional Details

Known for its adaptability, the 2SA1955FVATPL3Z is a popular choice in both professional and educational electronics projects, providing consistent performance.

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