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Same model may have multiple batches, images only for reference.
2SA1986-R Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SA1986-R

Part No 2SA1986-R
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Trans GP BJT PNP 230V 15A 150000mW 3-Pin(3+Tab) TO-3PN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 154148-2SA1986-R
Popularity Low
Supply and Demand Status Balance
Family Name 2SA1986R
Introduction Date February 20, 1997
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SA1986-R CAD Model

Description

Description

The 2SA1986-R variant is designed to offer enhanced reliability and better thermal performance. This PNP transistor is suitable for environments where efficiency and durability are crucial.

Features and Benefits

  • Enhanced Thermal Performance: Tolerates higher operating temperatures.
  • Durable Build: Perfect for demanding applications requiring long life spans.
  • Improved Current Capacity: Handles higher loads without compromising performance.
  • Low Collector-Emitter Saturation Voltage: Offers better energy efficiency.

Applications

  • Industrial Automation
  • LED Drivers
  • Telecommunication Systems
  • Robotics

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.5082 $60.5902
26+ $4.5195 $117.5070
40+ $4.3786 $175.1440
55+ $4.2365 $233.0075
71+ $4.0956 $290.7876
95+ $3.6717 $348.8115
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,020 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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