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2SA965-Y

Part No 2SA965-Y
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 800MA 120V TO226-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 1V @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 100mA, 5V
Maximum Power Dissipation 900mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package LSTM
Win Source Part Number 154381-2SA965-Y
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA965-Y CAD Model

Description

2SA965-Y Transistor is a versatile and high-performance component designed for a variety of electronic applications. This PNP bipolar junction transistor is known for its high gain and excellent linearity, making it ideal for amplification processes.

Features:

  • High current gain.
  • Low noise characteristics.
  • Excellent linearity.

Benefits:

  • Enhances signal amplification with strong linear response.
  • Reduces distortion in audio applications.
  • Reliable performance under various conditions.

Applications:

  • Audio frequency amplification.
  • Signal processing circuits.
  • General switching operations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 78,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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