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Same model may have multiple batches, images only for reference.
2SB1018A-Y(F)
Same model may have multiple batches, images only for reference.

2SB1018A-Y(F)

Part No 2SB1018A-Y(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans GP BJT NPN 80V 7A 3-Pin(3+Tab) TO-220NIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Base Voltage (VCBO) 100 V
Collector Emitter Voltage (VCEO) 80 V
Emitter Base Voltage (VEBO) 5 V
Frequency 10 MHz
Lead Free Lead Free
Max Collector Current 6 A
Mount Through Hole
Number of Elements 1
Number of Pins 3
Polarity NPN
Power Dissipation 2 W
RoHS Compliant
Win Source Part Number 1142787-2SB1018A-Y(F)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SB1018A-Y(F) CAD Model

Description

The 2SB1018A-Y(F) is an NPN RF transistor manufactured by Toshiba Semiconductor and Storage.

  • Frequency: 10 MHz
  • Power Dissipation: 2 W
  • Supply and Demand: Limited
  • Collector-Base Voltage (VCBO): 100 V
  • Collector-Emitter Voltage (VCEO): 80 V
  • Maximum Collector Current: 6 A
  • Mounting Type: Through-hole
  • RoHS Compliant: Yes
  • Lead-Free: Yes

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Availability: 1,426 pieces
MOQ: 4 pcs
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