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Same model may have multiple batches, images only for reference.
2SB1457(T6CANO,F,M Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SB1457(T6CANO,F,M

Part No 2SB1457(T6CANO,F,M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 2A 100V TO226-3
Datasheet
2SB1457(T6CANO,F,M Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Maximum) 2A
Voltage - Collector Emitter Breakdown (Maximum) 100V
Vce Saturation (Maximum) @ Ib, Ic 1.5V @ 1mA, 1A
Current - Collector Cutoff (Maximum) 10μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 2000 @ 1A, 2V
Power - Max 900mW
Frequency - Transition 50MHz
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Package TO-226-3, TO-92-3 Long Body
Manufacturer Package TO-92MOD
Win Source Part Number 762514-2SB1457(T6CANO,F,M
Popularity Medium
Supply and Demand Status Limited
Family Name 2SB1457
Estimated EOL Date 2021
Ultra Librarian 3D Model Ultra Librarian 2SB1457(T6CANO,F,M CAD Model

Description

The Toshiba Semiconductor and Storage 2SB1457 transistor is a PNP type with a maximum power of 900mW.

  • Frequency Transition: 50MHz
  • Current Collector (Ic) Maximum: 2A
  • Voltage - Collector Emitter Breakdown (maximum): 100V
  • Vce saturation (maximum) @ Ib, Ic: 1.5V @ 1mA, 1A
  • Current Collector Cutoff (maximum): 10μA (ICBO)
  • DC Current Gain (hFE) (minimum) @ Ic, Vce: 2000 @ 1A, 2V
  • Package: TO-226-3, TO-92-3 long body
  • Mounting Style: Through-hole
  • Operating Temperature Range: 150 degrees Celsius (TJ)
  • Family: 2SB1457
  • Estimated EOL date: 2021

Its estimated EOL date is 2021 and it has a medium popularity rating.

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