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Same model may have multiple batches, images only for reference.
TJ60S04M3L,LXHQ
Same model may have multiple batches, images only for reference.

TJ60S04M3L,LXHQ

Part No TJ60S04M3L,LXHQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 60A DPAK / P-Channel 40 V 60A (Ta) 90W (Tc) Surface Mount DPAK+
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 6.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V
Vgs (Max) +10V, -20V
Input Capacitance (Ciss) (Max) @ Vds 6510 pF @ 10 V
Power Dissipation (Max) 90W (Tc)
Temperature Range - Operating 175°C
Mounting Type Surface Mount
Supplier Device Package DPAK+
Package / Case TO-252-3, DPak (2 Leads + Tab) , SC-63
Base Product Number TJ60S04
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1339218-TJ60S04M3L,LXHQ
Ultra Librarian 3D Model Ultra Librarian TJ60S04M3L,LXHQ CAD Model

Description

The TJ60S04M3L,LXHQ is a P-channel MOSFET transistor manufactured by Toshiba Semiconductor and Storage.

  • Channel Type: P-Channel
  • Maximum Continuous Drain Current: 60A @ 25°C
  • Maximum Drain-Source Voltage: 40V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63

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