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2SC1815-Y(TE2.F.T)

Part No 2SC1815-Y(TE2.F.T)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 155127-2SC1815-Y(TE2.F.T)
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SC1815-Y(TE2.F.T) CAD Model

Description

Product Overview

The 2SC1815-Y(TE2.F.T) is a trusted NPN bipolar junction transistor that excels in delivering high performance in audio and general-purpose amplification tasks. It is widely recognized for its stability and high gain characteristics, making it a preferred choice for many electronics enthusiasts and professionals alike.

Features and Benefits

  • High Gain Amplification: This transistor provides substantial gain, crucial for applications that require effective signal amplification.
  • Low Power Consumption: Designed for efficiency, it doesn’t compromise on power, ensuring longer lasting use in portable devices.
  • Compact Size: Its small package design allows it to be fitted easily into tightly packed circuits.
  • Reliability: Offers high breakdown voltages, ensuring its reliability under high-stress conditions.

Applications

  • Pre-amplification for Audio Devices
  • Digital Switching
  • Signal Isolation
  • Voltage Regulators
  • Simple Push-Pull Amplifiers

Additional Details

The 2SC1815-Y(TE2.F.T) is renowned for its resilience and performance across various environmental conditions, with an operating temperature range from -55°C to +150°C. It supports collector currents up to 150mA and can handle maximum collector-emitter voltages of 50V, allowing flexibility in design requirements. It is suitable for an array of applications, providing excellent signal transmission and amplification capabilities. This device is easily integrated into automated manufacturing with its surface-mount technology, making it advantageous for mass production environments.

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