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Same model may have multiple batches, images only for reference.
RN1511(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1511(TE85L,F)

Part No RN1511(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W SMV
Datasheet
RN1511(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 120 @ 1mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMV
Win Source Part Number 096755-RN1511(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1511(TE85L,F) CAD Model

Description

The electronic component with Id 304224 is a Toshiba Semiconductor and Storage product, with a Win Source Part Number of 096755-RN1511(TE85L,F).

  • Package: Reel - TR
  • Mounting: SMD (SMT)
  • Frequency-Transition: 250MHz
  • Transistor Polarity: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Resistor Base (R1): 10k ohms
  • Emitter Base (R2): Not specified
  • Category: Discrete Semiconductor Products
  • Status: Active
  • Case/Package: SMV
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-Off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 120 @ 1mA, 5V
  • Maximum Power Dissipation: 300mW
  • Supply and Demand Status: Sufficient

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